tsm 160n10 100v n-channel power mosfet 1/6 version: b13 to - 220 product summary v ds (v) r ds(on) (m?) i d (a) 100 5.5 @ v gs =10v 160 features advanced trench technology low r ds(on) 5.5m? (max.) low gate charge typical @ 154nc (typ.) low crss typical @ 260pf (typ.) block diagram n-channel mosfet ordering information part no. package packing TSM160N10cz c0 to-220 50pcs / tube absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current t c =25c i d 160 a t c =70c 127 t a =25c 14.2 t a =70c 11.4 drain current-pulsed note 1 i dm 620 a avalanche current, l=0.5mh i as , i ar 40 a avalanche energy, l=0.5mh e as , e ar 400 mj maximum power dissipation t c =25c p d 300 w t c =70c 210 t a =25c 2.4 t a =70c 1.68 storage temperature range t stg -55 to +175 c operating junction temperature range t j -55 to +175 c * limited by maximum junction temperature thermal performance parameter symbol limit unit thermal resistance - junction to case r? jc 0.5 o c/w thermal resistance - junction to ambient r? ja 62.5 o c/w notes: surface mounted on fr4 board t 10sec pin definition : 1. gate 2. drain 3. source
tsm 160n10 100v n-channel power mosfet 2/6 version: b13 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 100 -- -- v drain-source on-state resistance v gs = 10v, i d = 30a r ds(on) -- 4.5 5.5 m? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2 3 4 v zero gate voltage drain current v ds = 80v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na dynamic total gate charge v ds = 30v, i d = 30a, v gs = 10v q g -- 154 -- nc gate-source charge q gs -- 35 -- gate-drain charge q gd -- 40 -- input capacitance v ds = 30v, v gs = 0v, f = 1.0mhz c iss -- 9840 -- pf output capacitance c oss -- 750 -- reverse transfer capacitance c rss -- 260 -- switching turn-on delay time v gs = 10v, v ds = 30v, r g = 3.3? t d(on) -- 25 -- ns turn-on rise time t r -- 40 -- turn-off delay time t d(off) -- 85 -- turn-off fall time t f -- 45 -- drain-source diode characteristics and maximum rating drain-source diode forward voltage v gs =0v, i s =30a v sd - 0.8 1.3 v reverse recovery time i s = 30a, t j =25 o c di/dt = 100a/us t fr 120 ns reverse recovery charge q fr 160 nc notes: 1. pulse test: pulse width 300s, duty cycle 2%. 2. r ja is the sum of the junction-to-case and case-to-ambient the rmal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. r ja shown below for single device operation on fr-4 in sti ll air
tsm 160n10 100v n-channel power mosfet 3/6 version: b13 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics gate threshold voltage gate source on resistance drain-source on resistance drain-source on-resistance source-drain diode forward voltage
tsm 160n10 100v n-channel power mosfet 4/6 version: b13 electrical characteristics curve (ta = 25 o c, unless otherwise noted) power derating drain current vs. junction temperature safe operation area transient thermal impedance capacitance gate charge
tsm 160n10 100v n-channel power mosfet 5/6 version: b13 to-220 mechanical drawing unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code
tsm 160n10 100v n-channel power mosfet 6/6 version: b13 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or i naccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this docu ment. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, a nd disclaims any express or implied warranty, relating to sale and/or use of tsc products including lia bility or warranties relating to fitness for a particul ar purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in med ical, life-saving, or life-sustaining applications. customers using or selling these products for use in such appl ications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper u se or sale.
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